Multimillion Atom Simulation of Electronic and Optical Properties of Nanoscale Devices Using NEMO 3-D
نویسندگان
چکیده
Shaikh Ahmed*, Neerav Kharche, Rajib Rahman, Muhammad Usman, Sunhee Lee, Hoon Ryu, Hansang Bae, Steve Clark, Benjamin Haley, Maxim Naumov, Faisal Saied, Marek Korkusinski, Rick Kennel, Michael McLennan, Timothy B. Boykin and Gerhard Klimeck School of Electrical and Computer Engineering and Network for Computational Nanotechnology, Purdue University, West Lafayette, IN, USA Electrical and Computer Engineering Department, Southern Illinois University, Carbondale, IL, USA Rosen Center for Advanced Computing, Purdue University, West Lafayette, IN, USA Department of Computer Science, Purdue University, West Lafayette, IN, USA Institute for Microstructural Sciences, National Research Council of Canada, Ottawa, ON, Canada Electrical and Computer Engineering Department, The University of Alabama in Huntsville, Huntsville, AL, USA Jet Propulsion Laboratory, California Institute of Technology, Pasadena, CA, USA School of Physics, University of Melbourne, Parkville, VIC, Australia
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Development of a Nanoelectronic 3-D (NEMO 3-D) Simulator for Multimillion Atom Simulations and Its Application to Alloyed Quantum Dots
Material layers with a thickness of a few nanometers are common-place in today’s semiconductor devices. Before long, device fabrication methods will reach a point at which the other two device dimensions are scaled down to few tens of nanometers. The total atom count in such deca-nano devices is reduced to a few million. Only a small finite number of “free” electrons will operate such nano-scal...
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